Laurie Calvet

My academic training was in the US with a BS in applied physics from Columbia University, NYC (1995), an MS (1996), MPhil (1998) and a PhD (2001) from Yale University. This was followed by post-docs at Harvard (in chemistry with George Whitesides) from 2001-2002, MIT (in physics with Marc Kastner) from 2002-2004, at CNRS-Thales (in the group of Albert Fert) from 2004-2006 and finally at C2N (ex-IEF) with Anne-Marie Gosnet-Haghiri (2006-2007). In 2007 I was recruited into the French CNRS as a staff scientist (CR1). I obtained my HdR in 2017 at the Université Paris-Sud in physics.

My research has centered around ‘nano-devices’, where we use novel devices and materials to realize new technologies and ‘nano-physics’ where we try to understand the basic functioning of such devices and materials from a fundamental physics viewpoint. Integrating these two aspects of my research led me to focus my research orientation in bio-inspired computing.

Previous research topics on nano-devices vary from carbon nanotubes, molecular electronics, novel MOSFETs to nanocrystals made of metallic, semiconducting or magnetic materials. These different projects have considered technologies including field emitters, spin valves, novel functionality transistors and diodes, artificial solids and charge pumps. Concerning nano-physics, my interests have centered around three main themes: understanding the transport in Schottky barrier devices, including both traditional materials such as metal/silicon contacts as well as more novel ones such metallic/SrTiO3, understanding the electronic properties of single or a few dopants in a semiconductor and exploration of quantum interference, both on the level of single interference events (for instance interfering paths traversing a single atom in a semiconductor) as well as collectively in terms of weak localization (for instance when in competition with electron-electron interactions in novel materials such as manganites).

My current work on bio–inspired computing focuses on realizing architectures that are both energetically favorable during operation and during fabrication.

5 selected publications:

M. Schwarz, L.E. Calvet, J.P. Snyder, T. Kraus, U. Schwalke, A. Kloes, “On the behavior of Cryogenic IV and III-V Schottky Barrier MOSFET Devices”, IEEE Trans on Electron Devices 64 (9), 3808-3815 (2017).

– G.Kurij, A.Solignac, T.Maroutian, G.Agnus, R.Guerrero, L.E.Calvet, M.Pannetier-Lecoeur, Ph.Lecoeur, “Low noise all-magnetic tunnel junctions based on the La0.7Sr0.3MnO3 / Nb:SrTiO3 interface” Applied Physics Letters 110, 082405 February 2017.

-J.S. Friedman, L.E. Calvet, P. Bessière, J. Droulez and D. Querlioz, “Bayesian Inference with Muller C-Elements for Error-Prone Nanodevices”, IEEE Trans Circ. Syst. I. 63, June 2016, pps. 82-85.

– L.E. Calvet, J.P. Snyder, W. Wernsdorfer, ‘Fano Resonance in the Electron Transport through a Single Impurity’, Physical Review B 83 205415 (2011).

– Dirk N. Weiss, Xavier Brokmann, Laurie E. Calvet, Marc A. Kastner, Moungi G. Bawendi “Multi-island single-electron devices from self-assembled colloidal nanocrystal chains” Appl Phys Lett 88, 143507 (April 2006).


Phone: (+33) 01 70 27 04 77